磁性非易失MRAM
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磁性隨機存儲器芯片(MRAM)磁性隨機存儲器芯片(MRAM)

一種非揮發性的磁性隨機存儲器。
它擁有靜態隨機存儲器(SRAM)的高速讀取寫入能力,
以及動態隨機存儲器(DRAM)的高集成度,而且基本上可以無限次地重復寫入
Everspin MRAM其原理是利用電子自旋的磁性結構,來提供不會產生損耗的非揮發特性。
Everspin MRAM可在集成了硅電路的磁性材料中存儲信息,以在單一、可無限使用的組件中提供SRAM的速度以及閃存的非揮發特性。

ES1GB-N03 nvNITRO™ PCIe HHHL Accelerator Card
 

The ES1GB-N03 nvNITRO™ Accelerator Card is a PCIe HHHL card based on Everspin’s STT-MRAM products and an NVMe protocol that delivers greater than 1.5 Million random write, write/read or read IOPS with 6μs latency.  It supports full data integrity on a power failure and virtually unlimited endurance using Everspin nvNITRO™ Accelerators.
 

Highlights Applications ES1GB-N03
•  1GB storage capacity •  Power Fail Safe Data & Metadata Cache/Buffer
•  PCIe Gen3 x8, half-height, low profile card •  Burst Data Deserializer
•  NVMe 1.1+ in block mode •  Database and Application Accelerators
•  Memory mapped IO (MMIO) in byte mode •  Storage Accelerator For All Flash Storage
•  Ultra-low access latency (as low as 2μS) Array (FSA)
•  Consistent latency (short tail) •  File System Accelerator (Parallel & Serial)
•  Customer-defined features using own RTL •  Power Fail Safe Software Defined Storage
with programmable FPGA •  Power Fail Safe Software and NVMe RAID
•  General purpose accelerator development •  OLTP Log Cache Acceleration
platform with programmable onboard FPGA, •  Storage Fabric (Network) Accelerators
Network SERDES, SATA, SODIMM etc. •  Shared Remote Persistent Memory
•  Development license for NVMe core IP  
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